| PART |
Description |
Maker |
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| HYB18T1G400BF07 HYB18T1G160BFV-3.7 HYB18T1G160BFV- |
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|
| HYB18TC1G160BF-3.7 HYB18TC1G800BF-3.7 HYB18TC1G160 |
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
http://
|
| PM5309 |
Multi-rate Telecom Backplane SERDES for 2.5 Gbit/s Interconnect
|
PMC-Sierra, Inc.
|
| HYB18T1G160BF-2.5F HYB18T1G160BF-3S HYB18T1G400BF- |
1-Gbit Double-Data-Rate-Two SDRAM
1-Gbit Double-Data-Rate-Two SDRAM
|
http://
Qimonda AG
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND51 |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
|
STMicroelectronics
NUMONYX
|
| NAND01G-N NAND01GR4N5 NAND01GR3N6 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60
512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
| HYB25D256800BT-7F HYB25D256400BT-7F HYB25D256400BC |
256 Mbit Double Data Rate SDRAM 256兆双倍数据速率SDRAM
256 Mbit Double Data Rate SDRAM
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| HYB18T512400B2FL-3.7 HYB18T512400B2FL-3S HYB18T512 |
512-Mbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|
